onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263

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N° de stock RS:
195-2517
Référence fabricant:
NVB150N65S3F
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

192W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.58mm

Width

9.65 mm

Length

10.67mm

Automotive Standard

AEC-Q101

SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

701 V @ TJ = 150°C

Typ. RDS(on) = 114 m

Ultra Low Gate Charge (Typ. Qg = 43 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 385 pF)

These Devices are Pb−Free

Applications

Automotive On Board Charger

Automotive DC/DC Converter for HEV

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