onsemi NCP51705MNTXG MOSFET Gate Driver 1, 6 A 24-Pin 22V, QFN
- N° de stock RS:
- 178-4643
- Référence fabricant:
- NCP51705MNTXG
- Fabricant:
- onsemi
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- N° de stock RS:
- 178-4643
- Référence fabricant:
- NCP51705MNTXG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Output Current | 6A | |
| Pin Count | 24 | |
| Fall Time | 15ns | |
| Package Type | QFN | |
| Driver Type | MOSFET | |
| Number of Outputs | 5 | |
| Rise Time | 15ns | |
| Minimum Supply Voltage | 22V | |
| Maximum Supply Voltage | 22V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 950μm | |
| Length | 4mm | |
| Standards/Approvals | No | |
| Series | NCP51705 | |
| Width | 4mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Output Current 6A | ||
Pin Count 24 | ||
Fall Time 15ns | ||
Package Type QFN | ||
Driver Type MOSFET | ||
Number of Outputs 5 | ||
Rise Time 15ns | ||
Minimum Supply Voltage 22V | ||
Maximum Supply Voltage 22V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 950μm | ||
Length 4mm | ||
Standards/Approvals No | ||
Series NCP51705 | ||
Width 4mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.
Allow independent Turn-ON/Turn-OFF Adjustment
Efficient SiC MOSFET Operation during the Conduction Period
Fast Turn-off and Robust dV/dt Immunity
Minimize complexity of bias supply in isolated gate drive applications
Sufficient VGS amplitude to match SiC best performance
Self protection of the design
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