Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 3-Pin TO-247 C3M0075120D
- N° de stock RS:
- 192-3376
- Référence fabricant:
- C3M0075120D
- Fabricant:
- Wolfspeed
Sous-total (1 tube de 30 unités)*
451,80 €
(TVA exclue)
546,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 120 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 15,06 € | 451,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 192-3376
- Référence fabricant:
- C3M0075120D
- Fabricant:
- Wolfspeed
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | C3M | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 19 V | |
| Maximum Power Dissipation Pd | 113.6W | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series C3M | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 19 V | ||
Maximum Power Dissipation Pd 113.6W | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information.
Minimum of 1200V Vbr across entire operating temperature range
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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