Wolfspeed C3M Type N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247 C3M0065100K
- N° de stock RS:
- 125-3453
- Référence fabricant:
- C3M0065100K
- Fabricant:
- Wolfspeed
Offre groupée disponible
Sous-total (1 unité)*
20,23 €
(TVA exclue)
24,48 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 5 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- 1 233 unité(s) finale(s) expédiée(s) à partir du 08 janvier 2026
Unité | Prix par unité |
|---|---|
| 1 - 24 | 20,23 € |
| 25 - 74 | 18,47 € |
| 75 - 149 | 17,96 € |
| 150 + | 17,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 125-3453
- Référence fabricant:
- C3M0065100K
- Fabricant:
- Wolfspeed
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | C3M | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 113.5W | |
| Maximum Gate Source Voltage Vgs | 19 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Height | 23.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series C3M | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 113.5W | ||
Maximum Gate Source Voltage Vgs 19 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Height 23.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
MOSFET Transistors, Cree Inc.
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