STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 STD11N65M2
- N° de stock RS:
- 188-8395
- Référence fabricant:
- STD11N65M2
- Fabricant:
- STMicroelectronics
Sous-total (1 paquet de 5 unités)*
7,63 €
(TVA exclue)
9,23 €
(TVA incluse)
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 1,526 € | 7,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8395
- Référence fabricant:
- STD11N65M2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 680mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 85W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 2.17mm | |
| Width | 6.2 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 680mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 85W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 2.17mm | ||
Width 6.2 mm | ||
Automotive Standard No | ||
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Extremely low gate charge
Excellent output capacitance (COSS) profile
Zener-protected
Applications
Switching applications
Liens connexes
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