Vishay Single Type N-Channel Power MOSFET, 11 A, 500 V TO-263 IRFS11N50APBF
- N° de stock RS:
- 180-8783
- Référence fabricant:
- IRFS11N50APBF
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
17,06 €
(TVA exclue)
20,645 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 355 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,412 € | 17,06 € |
| 50 - 120 | 3,07 € | 15,35 € |
| 125 - 245 | 2,90 € | 14,50 € |
| 250 - 495 | 2,728 € | 13,64 € |
| 500 + | 2,558 € | 12,79 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8783
- Référence fabricant:
- IRFS11N50APBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-263 | |
| Maximum Drain Source Resistance Rds | 0.52Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-263 | ||
Maximum Drain Source Resistance Rds 0.52Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 520mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 170W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Effective coss specified
• Fully characterized capacitance and avalanche voltage and current
• Halogen and lead (Pb) free component
• Improved gate, avalanche and dynamic dV/dt
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
Liens connexes
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