Vishay Single IRF620S 1 Type N-Channel Power MOSFET, 5.2 A, 200 V, 3-Pin TO-263 IRF620SPBF
- N° de stock RS:
- 180-8301
- Référence fabricant:
- IRF620SPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
62,40 €
(TVA exclue)
75,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 700 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 200 | 1,248 € | 62,40 € |
| 250 - 450 | 1,173 € | 58,65 € |
| 500 - 1200 | 1,061 € | 53,05 € |
| 1250 - 2450 | 0,998 € | 49,90 € |
| 2500 + | 0,936 € | 46,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8301
- Référence fabricant:
- IRF620SPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRF620S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRF620S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay IRF620S Series Power MOSFET, 200V Maximum Drain Source Voltage, 5.2A Maximum Continuous Drain Current - IRF620SPBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management tasks in electronic and industrial systems. It is supplied in a TO-263 surface-mount package for board-level mounting and is suited to applications requiring moderate current handling and elevated-temperature operation.
Features and Benefits:
• 200V drain-source rating enables high-voltage switching capability • 5.2A continuous drain current supports moderate load currents • 0.8Ω Rds(on) offers predictable conduction losses for heat budgeting • 14nC typical gate charge allows reasonable switching speed and drive design • 50W power dissipation assists thermal planning for power stages • -55°C to 150°C operating range tolerates wide temperature environments
Applications
• Suitable for switching power supplies in industrial equipment • Ideal for motor-drive gate stages with moderate current needs • Used for DC-DC converters in automation systems • Can be used for load switching in electrical control panels
What mounting considerations apply for heat management?
The TO-263 SMD package requires a suitably sized copper pad and thermal vias to spread dissipated power and maintain junction temperature within limits.
What gate-drive voltage range should I design for?
Gate-source voltage must be kept within ±20V, so drive circuits should limit applied gate amplitude accordingly.
How does device ruggedness affect reliability at elevated temperature?
The maximum operating temperature of 150°C permits use in hot environments, but continuous dissipation near the 50W limit will require effective PCB thermal design to avoid thermal overstress.
Are there environmental standards relevant to procurement?
The component conforms to RoHS requirements and follows relevant material specifications for PCB assembly processes.
Liens connexes
- Vishay Single 1 Type N-Channel Power MOSFET 200 V TO-263
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB IRL620PBF
- Vishay SiHF620S Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay SiHF620S Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 SIHF620S-GE3
- Vishay Single Type N-Channel Power MOSFET 500 V TO-263
- Vishay N-Channel N-Channel Mosfet 200 V, 3-Pin TO-263
- Vishay Single Type N-Channel Power MOSFET 500 V TO-263 IRFS11N50APBF