Vishay Single 1 Type N-Channel MOSFET, 2.4 A, 50 V, 4-Pin HVMDIP
- N° de stock RS:
- 180-8673
- Référence fabricant:
- IRFD020PBF
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
10,68 €
(TVA exclue)
12,925 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 90 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,136 € | 10,68 € |
| 50 - 245 | 1,96 € | 9,80 € |
| 250 - 495 | 1,816 € | 9,08 € |
| 500 - 1245 | 1,712 € | 8,56 € |
| 1250 + | 1,604 € | 8,02 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8673
- Référence fabricant:
- IRFD020PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | HVMDIP | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS Directive 2002/95/EC | |
| Length | 0.29in | |
| Width | 0.425 in | |
| Height | 0.330in | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type HVMDIP | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS Directive 2002/95/EC | ||
Length 0.29in | ||
Width 0.425 in | ||
Height 0.330in | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
Vishay MOSFET
The Vishay MOSFET is an N-channel, HVMDIP-4 package is a new age product with a drain-source voltage of 50V and maximum gate-source voltage of 20V. It has a drain-source resistance of 100mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 1W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Compact, end stackable
• Ease of paralleling
• Excellent temperature stability
• Fast switching
• For automatic insertion
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)