Vishay Single 1 Type N-Channel Power MOSFET, 6.2 A, 600 V, 3-Pin TO-220AB IRFBC40APBF
- N° de stock RS:
- 180-8315
- Référence fabricant:
- IRFBC40APBF
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
59,45 €
(TVA exclue)
71,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 650 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,189 € | 59,45 € |
| 100 - 200 | 1,129 € | 56,45 € |
| 250 + | 1,07 € | 53,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8315
- Référence fabricant:
- IRFBC40APBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 125W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.71mm | |
| Standards/Approvals | RoHS | |
| Length | 14.4mm | |
| Width | 10.52 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 125W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 6.71mm | ||
Standards/Approvals RoHS | ||
Length 14.4mm | ||
Width 10.52 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220-3 package is a new age product with a drain-source voltage of 600V and maximum gate-source voltage of 30V. It has a drain-source resistance of 1.20mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 125W. The product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Effective coss specified
• Fully characterized capacitance and avalanche voltage and current
• Improved gate, avalanche and dynamic dV/dt
• Lead (Pb) free component
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies