Vishay Single 1 Type P-Channel Power MOSFET, 18 A, 50 V TO-220AB IRF9Z30PBF
- N° de stock RS:
- 180-8845
- Référence fabricant:
- IRF9Z30PBF
- Fabricant:
- Vishay
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 180-8845
- Référence fabricant:
- IRF9Z30PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | TO-220AB | |
| Maximum Drain Source Resistance Rds | 0.14Ω | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Width | 10.52mm | |
| Standards/Approvals | RoHS | |
| Length | 14.4mm | |
| Height | 6.48mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type TO-220AB | ||
Maximum Drain Source Resistance Rds 0.14Ω | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Width 10.52mm | ||
Standards/Approvals RoHS | ||
Length 14.4mm | ||
Height 6.48mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-220AB package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 140mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 74W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Advanced process technology
• Fast switching
• Fully avalanched rated
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
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