Vishay Single 1 Type P-Channel Power MOSFET, 18 A, 50 V TO-220AB IRF9Z30PBF
- N° de stock RS:
- 180-8311
- Référence fabricant:
- IRF9Z30PBF
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
76,05 €
(TVA exclue)
92,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 600 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 200 | 1,521 € | 76,05 € |
| 250 - 450 | 1,429 € | 71,45 € |
| 500 - 1200 | 1,293 € | 64,65 € |
| 1250 - 2450 | 1,216 € | 60,80 € |
| 2500 + | 1,14 € | 57,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8311
- Référence fabricant:
- IRF9Z30PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | TO-220AB | |
| Maximum Drain Source Resistance Rds | 0.14Ω | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 74W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.4mm | |
| Width | 10.52 mm | |
| Height | 6.48mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type TO-220AB | ||
Maximum Drain Source Resistance Rds 0.14Ω | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 74W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 14.4mm | ||
Width 10.52 mm | ||
Height 6.48mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-220AB package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 140mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 74W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Advanced process technology
• Fast switching
• Fully avalanched rated
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
Liens connexes
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- Vishay Type P-Channel MOSFET 60 V TO-220AB
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB IRL620PBF