Vishay IRF9Z14 Type P-Channel Power MOSFET, -6.7 A, -60 V Enhancement, 3-Pin TO-220AB IRF9Z14PBF
- N° de stock RS:
- 178-0838
- Référence fabricant:
- IRF9Z14PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
47,30 €
(TVA exclue)
57,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 300 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,946 € | 47,30 € |
| 100 - 200 | 0,804 € | 40,20 € |
| 250 + | 0,709 € | 35,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-0838
- Référence fabricant:
- IRF9Z14PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | -6.7A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | IRF9Z14 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | -5.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id -6.7A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series IRF9Z14 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf -5.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Length 10.41mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
Vishay IRF9Z14 Series Power MOSFET, 60V Drain Source Voltage, 43W Power Dissipation - IRF9Z14PBF
This power MOSFET is a P-channel device designed for switching and amplification tasks in medium-power electronics. It operates with negative drain-source and gate-source polarities and is supplied in a TO-220AB through-hole package suited to boards requiring robust mounting and thermal interfacing. The component complies with RoHS and is intended for applications that demand defined gate control and reliable current handling within constrained thermal environments.
Features and Benefits:
• Rated for -60V drain-source voltage enabling higher-voltage P-channel designs
• Maximum continuous drain current of -6.7A supports substantial load currents
• Maximum power dissipation 43W allows sustained thermal loading
• Typical gate charge 12 nC reduces switching energy and transition losses
• Low RDS(on) 500 mΩ minimises conduction losses at operating conditions
• Tolerant operating range -55 °C to 175 °C for elevated-temperature systems
• Maximum continuous drain current of -6.7A supports substantial load currents
• Maximum power dissipation 43W allows sustained thermal loading
• Typical gate charge 12 nC reduces switching energy and transition losses
• Low RDS(on) 500 mΩ minimises conduction losses at operating conditions
• Tolerant operating range -55 °C to 175 °C for elevated-temperature systems
Applications
• Suitable for audio amplifier power-stage switching duties
• Ideal for discrete high-side switching in power supplies
• Used with through-hole layouts requiring firm heat-sink attachment
• Can be used for motor driver circuits needing a P-channel configuration
• Suitable for replacement in designs needing 60V P-channel devices
• Ideal for discrete high-side switching in power supplies
• Used with through-hole layouts requiring firm heat-sink attachment
• Can be used for motor driver circuits needing a P-channel configuration
• Suitable for replacement in designs needing 60V P-channel devices
What is the package and mounting style for board integration?
The device is supplied in a TO-220AB package with three pins for through-hole mounting, facilitating straightforward soldered connections and mechanical stability.
How does the gate voltage limit affect control circuitry?
The maximum gate-source voltage rating is 20V, so driver circuits must keep gate swings within this limit to avoid damage.
What thermal considerations should I observe during PCB design?
With 43W maximum dissipation, designers should provide a heat sink or adequate copper area and consider thermal vias to maintain junction temperatures.
How does channel type and mode influence switching behaviour?
As a P-channel enhancement device, it requires a gate voltage more positive relative to the source to turn off and more negative relative to the source to switch on, suitable for high-side arrangements.
Liens connexes
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