Vishay TrenchFET Type N-Channel MOSFET, 8 A, 40 V Enhancement, 3-Pin SOT-23 SQ2318AES-T1_GE3

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N° de stock RS:
180-8032
Référence fabricant:
SQ2318AES-T1_GE3
Fabricant:
Vishay
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Marque

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.7nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

3.04mm

Height

1.12mm

Width

2.64 mm

Automotive Standard

AEC-Q101

Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 31mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 3W and continuous drain current of 8A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested

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