Vishay Siliconix TrenchFET Type N-Channel MOSFET, 2 A, 60 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 178-3708
- Référence fabricant:
- SQ2364EES-T1_GE3
- Fabricant:
- Vishay Siliconix
Sous-total (1 bobine de 3000 unités)*
678,00 €
(TVA exclue)
819,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,226 € | 678,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-3708
- Référence fabricant:
- SQ2364EES-T1_GE3
- Fabricant:
- Vishay Siliconix
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
Statut RoHS : Exempté
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 8V. It has drain-source resistance of 240mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2A. It has a minimum and a maximum driving voltage of 1.5V and 4.5V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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