Vishay Single SQM 1 Type P-Channel TrenchFET Power MOSFET, 120 A, 60 V, 3-Pin TO-263 SQM120P06-07L_GE3
- N° de stock RS:
- 180-7921
- Référence fabricant:
- SQM120P06-07L_GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 5 unités)*
19,71 €
(TVA exclue)
23,85 €
(TVA incluse)
Ajouter 20 unités pour bénéficier d'une livraison gratuite
En stock
- 1 610 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 3,942 € | 19,71 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7921
- Référence fabricant:
- SQM120P06-07L_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | TrenchFET Power MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQM | |
| Package Type | TO-263 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0067Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Width | 0.41 in | |
| Height | 0.19in | |
| Length | 0.625in | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type TrenchFET Power MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQM | ||
Package Type TO-263 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0067Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Width 0.41 in | ||
Height 0.19in | ||
Length 0.625in | ||
Standards/Approvals AEC-Q101, RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• Package low thermal resistance
• TrenchFET power MOSFET
Applications
• Adaptor switches
• Load switches
• Notebook PCs
Liens connexes
- Vishay Single SQM 1 Type P-Channel TrenchFET Power MOSFET 60 V, 3-Pin TO-263
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin TO-263 SUM60061EL-GE3
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB120P04P404ATMA2
- Infineon OptiMOS P Type P-Channel Power Transistor 40 V Enhancement, 3-Pin TO-263
- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8
- Vishay Single TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8