Vishay SI P-Channel Single MOSFETs, -120 A, -60 V Enhancement Mode, 3-Pin TO-263 SQM120P06-07L_NE3
- N° de stock RS:
- 829-359
- Référence fabricant:
- SQM120P06-07L_NE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
3,79 €
(TVA exclue)
4,59 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 3,79 € |
| 10 - 99 | 2,48 € |
| 100 - 499 | 1,86 € |
| 500 - 799 | 1,60 € |
| 800 + | 1,57 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-359
- Référence fabricant:
- SQM120P06-07L_NE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -120A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Package Type | TO-263 | |
| Series | SI | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0067Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 10.16mm | |
| Width | 10.28mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -120A | ||
Maximum Drain Source Voltage Vds -60V | ||
Package Type TO-263 | ||
Series SI | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0067Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Standards/Approvals RoHS Compliant | ||
Length 10.16mm | ||
Width 10.28mm | ||
Automotive Standard No | ||
- Pays d'origine :
- GB
The Vishay automotive P-Channel power MOSFET designed for high-performance applications, providing a robust solution for effective power management in automotive environments.
TrenchFET technology enhances efficiency and reduces power loss
AEC-Q101 qualified for reliability in automotive applications
Low thermal resistance package ensures optimal heat dissipation
Excellent on-state resistance at varying gate voltages improves performance
Liens connexes
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