Vishay SQM P-Channel Single MOSFETs, -93 A, -100 V Enhancement Mode, 3-Pin TO-263 SQM100P10-19L_NE3
- N° de stock RS:
- 829-357
- Référence fabricant:
- SQM100P10-19L_NE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,09 €
(TVA exclue)
2,53 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,09 € |
| 10 - 24 | 2,04 € |
| 25 - 99 | 1,99 € |
| 100 + | 1,86 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-357
- Référence fabricant:
- SQM100P10-19L_NE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -93A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Series | SQM | |
| Package Type | TO-263 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0190Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.16mm | |
| Height | 4.57mm | |
| Width | 10.28mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -93A | ||
Maximum Drain Source Voltage Vds -100V | ||
Series SQM | ||
Package Type TO-263 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0190Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Length 10.16mm | ||
Height 4.57mm | ||
Width 10.28mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Pays d'origine :
- GB
The Vishay power MOSFET designed for automotive applications, offering efficient performance and high reliability. Its Advanced TrenchFET technology ensures optimal thermal management and effective switching capabilities.
TrenchFET technology enhances efficiency and thermal performance
Rated for a Drain-Source Voltage of -100 V, ensuring robust operation
Package designed for low thermal resistance for better heat dissipation
Tests show 100% R and UIS validation for high reliability
Liens connexes
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