Vishay TrenchFET Type P-Channel MOSFET, 3.1 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-E3
- N° de stock RS:
- 180-7719
- Référence fabricant:
- SI2301CDS-T1-E3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
8,65 €
(TVA exclue)
10,475 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 325 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 225 | 0,346 € | 8,65 € |
| 250 - 600 | 0,339 € | 8,48 € |
| 625 - 1225 | 0,235 € | 5,88 € |
| 1250 - 2475 | 0,177 € | 4,43 € |
| 2500 + | 0,152 € | 3,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7719
- Référence fabricant:
- SI2301CDS-T1-E3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 112mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 2.64 mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 112mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 2.64 mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 8V. It has drain-source resistance of 112mohm at a gate-source voltage of 4.5V. It has continuous drain current of 3.1A and maximum power dissipation of 1.6W. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
Liens connexes
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