Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8

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N° de stock RS:
180-7294
Référence fabricant:
SI4559ADY-T1-E3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

3.4W

Typical Gate Charge Qg @ Vgs

6nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

5mm

Height

1.75mm

Standards/Approvals

IEC 61249-2-21

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source resistance of 58mohm at a gate-source voltage of 10V. It has a drain-source voltage of 60V. It has continuous drain currents of 5.3A and 3.9A. It has a maximum power rating of 3.4W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in CCFL inverters.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested

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