Vishay TrenchFET Type N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23

Voir l’ensemble des MOSFETs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau en stock, il n'est plus vendu par le fabricant.
N° de stock RS:
180-7271
Référence fabricant:
SI2308BDS-T1-E3
Fabricant:
Vishay
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.192Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

1.66W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

2.3nC

Maximum Operating Temperature

150°C

Height

1.12mm

Length

3.04mm

Standards/Approvals

IEC 61249-2-21

Width

2.64 mm

Automotive Standard

No

Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 156mohm at a gate-source voltage of 10V. It has a maximum power rating of 1.66W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• Battery Switch

• DC/DC Converter

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested

Liens connexes