Infineon OptiMOS 5 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252

N° de stock RS:: 178-7369
Référence fabricant:: IPD025N06NATMA1
Fabricant:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252

Sous-total (1 bobine de 2500 unités)*

2 075,00 €

(TVA exclue)

2 500,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

5 000 unité(s) expédiée(s) à partir du 10 août 2026

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Unité	Prix par unité	la bobine*
2500 +	0,83 €	2 075,00 €

*Prix donné à titre indicatif

N° de stock RS:: 178-7369
Référence fabricant:: IPD025N06NATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS 5
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.8mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	71nC
	Maximum Power Dissipation Pd	167W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Standards/Approvals	No
	Height	2.41mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS 5
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.8mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 71nC
	Maximum Power Dissipation Pd 167W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Standards/Approvals No
	Height 2.41mm
	Automotive Standard No

IPD025N06N OptiMOS Power-Transistor

Statut RoHS : Exempté

Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD025N06NATMA1

This n-channel enhancement MOSFET is a power transistor designed for surface-mounted electronics requiring robust switching and conduction at medium voltage levels. It operates across a wide temperature span and is intended for high-current applications where low conduction losses and moderate gate drive are required. The device is supplied in a TO-252 package suitable for automated assembly on densely populated boards.

Features and Benefits:

• 3.8mΩ Rds(on) reduces conduction losses for higher efficiency
• 90A continuous drain current supports heavy-load switching
• 60V drain-source rating enables medium-voltage designs
• 71nC typical gate charge minimises drive energy requirements
• 167W maximum power dissipation allows elevated power handling
• 20V gate-source limit permits robust gate‑drive margins

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for motor‑drive half‑bridges in industrial controllers
• Used with battery‑management systems requiring high current
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for power stages in server or storage electronics

What temperature range can it withstand during operation?

It is specified to operate from -55°C up to 175°C, accommodating hostile thermal environments.

How is it packaged for assembly and cooling?

The component is supplied in a TO-252 (DPAK) surface‑mount package designed for soldered board mounting and thermal transfer to heatsinking planes.

What gate‑drive considerations should I account for?

The gate-source voltage must not exceed 20V

drive circuits should be sized to deliver the typical 71nC gate charge for desired switching speeds.

How does its channel type affect switching behaviour?

As an N‑channel enhancement device it requires a positive gate voltage to conduct, providing low on‑resistance for efficient high‑current paths.