onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3
- N° de stock RS:
- 178-4657
- Référence fabricant:
- FCMT250N65S3
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
18,84 €
(TVA exclue)
22,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 4 230 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,884 € | 18,84 € |
| 100 - 240 | 1,751 € | 17,51 € |
| 250 + | 1,708 € | 17,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4657
- Référence fabricant:
- FCMT250N65S3
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | FCMT | |
| Package Type | Power88 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Operating Temperature | 150°C | |
| Width | 8 mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Length | 8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series FCMT | ||
Package Type Power88 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Operating Temperature 150°C | ||
Width 8 mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Length 8mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 24 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
Optimized Capacitance
Typ. RDS(on) = 210 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
Liens connexes
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