onsemi FCMT Type N-Channel MOSFET, 10 A, 650 V Enhancement, 4-Pin PQFN

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N° de stock RS:
195-2502
Référence fabricant:
FCMT360N65S3
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

650V

Package Type

PQFN

Series

FCMT

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

18nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

8 mm

Height

1.05mm

Standards/Approvals

No

Length

8mm

Automotive Standard

No

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources.

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