onsemi Dual 2 Type N-Channel Power MOSFET, 127 A, 40 V Enhancement, 8-Pin DFN NVMFD5C446NT1G
- N° de stock RS:
- 178-4437
- Référence fabricant:
- NVMFD5C446NT1G
- Fabricant:
- onsemi
Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
Produit de remplacement
Ce produit n'est pas disponible actuellement. Voici notre produit de remplacement:
L'unité (sur une bobine de 1500)
1,832 €
(TVA exclue)
2,217 €
(TVA incluse)
- N° de stock RS:
- 178-4437
- Référence fabricant:
- NVMFD5C446NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 127A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 89W | |
| Minimum Operating Temperature | 175°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 1.05mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 127A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 89W | ||
Minimum Operating Temperature 175°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 1.05mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C446NWF - Wettable Flank Option
Benefits
Minimal conduction losses
Robust load performance
Safeguard against voltage overstress failures
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
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