onsemi Dual 2 Type N-Channel Power MOSFET, 127 A, 40 V Enhancement, 8-Pin DFN

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Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
N° de stock RS:
178-4296
Référence fabricant:
NVMFD5C446NT1G
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

127A

Maximum Drain Source Voltage Vds

40V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

175°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

38nC

Maximum Power Dissipation Pd

89W

Forward Voltage Vf

0.8V

Transistor Configuration

Dual

Maximum Operating Temperature

-55°C

Width

6.1 mm

Length

5.1mm

Standards/Approvals

No

Height

1.05mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Pays d'origine :
MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.

Features

Low on resistance

High current capability

PPAP capable

NVMFD5C446NWF - Wettable Flank Option

Benefits

Minimal conduction losses

Robust load performance

Safeguard against voltage overstress failures

Suitable for automotive applications

Enhanced Optical Inspection

Applications

Solenoid driver

Low side / high side driver

End Products

Automotive engine controllers

Antilock braking systems

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