onsemi Dual NVMFD5C470NL 2 Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin DFN NVMFD5C470NLT1G

Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
Options de conditionnement :
N° de stock RS:
172-3371
Référence fabricant:
NVMFD5C470NLT1G
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

40V

Package Type

DFN

Series

NVMFD5C470NL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

24W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

No

Length

6.1mm

Height

1.05mm

Width

5.1 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Compact Design

Low rDS(on)

Minimize Conduction Loss

Low QG and Capacitance

Minimize Driver Losses

NVMFD5C446NLWF − Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Applications

Solenoid driver

Low side / high side driver

Automotive engine controllers

Antilock braking systems

Liens connexes