onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 178-4242
- Référence fabricant:
- FCP125N65S3R0
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
104,80 €
(TVA exclue)
126,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,096 € | 104,80 € |
| 100 - 200 | 1,683 € | 84,15 € |
| 250 - 450 | 1,583 € | 79,15 € |
| 500 - 950 | 1,495 € | 74,75 € |
| 1000 + | 1,304 € | 65,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4242
- Référence fabricant:
- FCP125N65S3R0
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | FCP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 181W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 16.3mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series FCP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 181W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 16.3mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150 °C
Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
Ultra Low Gate Charge (Typ. Qg = 46 nC)
Optimized Capacitance
Typ. RDS(on) = 105 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consummer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
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