onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 178-4258
- Référence fabricant:
- NTPF082N65S3F
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
208,25 €
(TVA exclue)
252,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 250 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 4,165 € | 208,25 € |
| 100 + | 3,957 € | 197,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4258
- Référence fabricant:
- NTPF082N65S3F
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.12mm | |
| Standards/Approvals | No | |
| Length | 10.63mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Operating Temperature 150°C | ||
Height 16.12mm | ||
Standards/Approvals No | ||
Length 10.63mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features
700 V @ TJ = 150 oC
Ultra Low Gate Charge (Typ. Qg = 70 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge Circuit
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
Solar / UPS
EV charger
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