onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220

Sous-total (1 tube de 50 unités)*

143,00 €

(TVA exclue)

173,00 €

(TVA incluse)

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Dernier stock RS
  • 250 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité
Prix par unité
le tube*
50 +2,86 €143,00 €

*Prix donné à titre indicatif

N° de stock RS:
178-4258
Référence fabricant:
NTPF082N65S3F
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

82mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Power Dissipation Pd

48W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

10.63mm

Standards/Approvals

No

Height

16.12mm

Width

4.9 mm

Automotive Standard

No

Pays d'origine :
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features

700 V @ TJ = 150 oC

Ultra Low Gate Charge (Typ. Qg = 70 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)

Optimized Capacitance

Excellent body diode performance (low Qrr, robust body diode)

Typ. RDS(on) = 70 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Higher system reliability in LLC and Phase shift full bridge Circuit

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

Solar / UPS

EV charger

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