Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3

N° de stock RS:: 178-3693
Référence fabricant:: SiS110DN-T1-GE3
Fabricant:: Vishay Siliconix

Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3

Sous-total (1 bobine de 3000 unités)*

918,00 €

(TVA exclue)

1 110,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 11 décembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,306 €	918,00 €

*Prix donné à titre indicatif

N° de stock RS:: 178-3693
Référence fabricant:: SiS110DN-T1-GE3
Fabricant:: Vishay Siliconix

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay Siliconix
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14.2A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PowerPAK 1212
	Series	SiS110DN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	24W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	8.5nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	3.15mm
	Standards/Approvals	RoHS
	Width	3.15mm
	Height	1.07mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay Siliconix
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14.2A
	Maximum Drain Source Voltage Vds 100V
	Package Type PowerPAK 1212
	Series SiS110DN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 24W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 8.5nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 3.15mm
	Standards/Approvals RoHS
	Width 3.15mm
	Height 1.07mm
	Automotive Standard No

Datasheet

Statut RoHS : Exempté

Pays d'origine :: CN

Vishay SiS110DN Series MOSFET, 100V Drain Source Voltage, 14.2A Continuous Drain Current - SiS110DN-T1-GE3

This MOSFET is a surface-mount N-channel transistor designed for switching and power management in compact electronic assemblies. It operates across a wide ambient range and is intended for applications requiring a balance of voltage handling, current capability and moderate gate charge for efficient control.

Features and Benefits:

• 100V drain tolerance enables high-voltage switching capability
• 70 mΩ low RDS(on) reduces conduction losses
• 14.2A continuous drain current supports substantial load currents
• 24W power dissipation allows sustained power handling
• 8.5 nC typical gate charge facilitates responsive gate driving
• ±20V gate-source rating offers robust gate-voltage margin

Applications

• Suitable for DC-DC converter switching stages
• Ideal for motor-drive low-side switching
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution

What thermal range can I expect for reliable operation?

The device is specified to function from -55 °C up to 150 °C, allowing use in environments with large temperature variation.

How does the package support PCB assembly and cooling?

It is supplied in a compact PowerPAK1212 package for low-profile surface-mount placement and reasonable thermal transfer to the PCB.

What gate-drive considerations apply given the gate charge?

With a typical gate charge of 8.5 nC, gate drivers should source and sink sufficient current to switch at the desired speed without excessive drive losses.

Are there any regulatory restrictions noted for this component?

The component conforms to RoHS requirements for restricted substances in electronic assemblies.