Infineon HEXFET N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220 IRF1010EPBF
- N° de stock RS:
- 178-1449
- Référence fabricant:
- IRF1010EPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
51,35 €
(TVA exclue)
62,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 700 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,027 € | 51,35 € |
| 100 - 200 | 0,842 € | 42,10 € |
| 250 - 450 | 0,791 € | 39,55 € |
| 500 - 1200 | 0,74 € | 37,00 € |
| 1250 + | 0,688 € | 34,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-1449
- Référence fabricant:
- IRF1010EPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Width | 4.69mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Length 10.54mm | ||
Width 4.69mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF
This MOSFET is designed for high performance in various electronic applications. Its low on-resistance characteristics and capacity for high continuous drain currents make it a key component for engineers in automation and power management systems. The device performs well in rugged environments, ensuring consistent operation across a broad temperature range.
Features & Benefits
• Low RDS(on) contributes to minimal power loss at high currents
• High continuous drain current capability of up to 84A enhances efficiency
• Compact TO-220AB package allows for easy mounting
• Fast switching capabilities improve overall circuit performance
• Fully avalanche rated for added device protection
Applications
• Power supply circuits for efficient voltage regulation
• Motor control systems for precise operation
• Driver circuits in high current
• Signal amplification in electronic devices
What are the thermal resistance values for this product?
The junction-to-case thermal resistance is 0.75°C/W, and the case-to-sink thermal resistance on a flat, greased surface is 0.50°C/W, enabling efficient heat dissipation.
Can it operate safely in environments with high temperatures?
Yes, it functions effectively at temperatures up to 175°C, making it suitable for applications where heat is a concern.
What type of current can it handle at high temperatures?
At a case temperature of 100°C, it can manage a continuous drain current of 59A, ensuring dependable operation under load.
How does the gate charge affect its performance?
With a typical gate charge of 130 nC at 10V, it enables rapid switching and efficient operation in dynamic applications.
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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