Vishay IRF620 Type N-Channel Power MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-220AB IRF620PBF
- N° de stock RS:
- 178-0854
- Référence fabricant:
- IRF620PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
35,65 €
(TVA exclue)
43,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 900 unité(s) expédiée(s) à partir du 10 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,713 € | 35,65 € |
| 100 - 200 | 0,606 € | 30,30 € |
| 250 + | 0,535 € | 26,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-0854
- Référence fabricant:
- IRF620PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220AB | |
| Series | IRF620 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220AB | ||
Series IRF620 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Width 4.7mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF620 Series Power MOSFET, 200V Drain Source Voltage, 50W Power Dissipation - IRF620PBF
This power MOSFET is a high-voltage N-channel transistor intended for through-hole power electronics. It operates across a wide temperature span and is suited to switching and amplification tasks where a robust drain-source voltage capability is required. The component is presented in a conventional through-hole package to facilitate mounting in mixed-technology assemblies.
Features and Benefits:
• 200V drain-source rating enables high-voltage switching applications
• 0.8Ω on-resistance reduces conduction losses in low-current circuits
• 5.2A continuous drain current supports moderate power loads
• 50W power dissipation capacity allows sustained thermal stress handling
• 14nC typical gate charge promotes efficient gate driving at Vgs20V
• N-channel enhancement mode simplifies use in common switching topologies
• 0.8Ω on-resistance reduces conduction losses in low-current circuits
• 5.2A continuous drain current supports moderate power loads
• 50W power dissipation capacity allows sustained thermal stress handling
• 14nC typical gate charge promotes efficient gate driving at Vgs20V
• N-channel enhancement mode simplifies use in common switching topologies
Applications
• Suitable for power supplies handling high-voltage rails
• Ideal for motor control in small industrial drives
• Used with audio amplifiers requiring high-voltage transistors
• Can be used for DC-DC converters in bench equipment
• Appropriate for hobbyist and prototype through-hole assemblies
• Ideal for motor control in small industrial drives
• Used with audio amplifiers requiring high-voltage transistors
• Can be used for DC-DC converters in bench equipment
• Appropriate for hobbyist and prototype through-hole assemblies
What gate voltage should be applied for reliable switching?
The device accepts up to 20V between gate and source
use appropriate gate-drive voltages below this maximum to switch effectively.
How does thermal performance affect mounting choices?
With 50W maximum dissipation, a heatsink or adequate PCB copper area is recommended to maintain junction temperatures within safe limits during continuous operation.
What are the expected switching characteristics?
The typical gate charge of 14nC at the specified gate drive indicates moderate gate-drive energy requirements and influences switching speed and driver selection.
What environmental extremes can it tolerate?
It is specified for operation from -55°C up to 150°C, permitting use in a wide range of ambient and elevated-temperature environments.
Liens connexes
- Vishay IRF620 Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-220AB
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB IRL620PBF
- Vishay SiHF620S Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay SiHF620S Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 SIHF620S-GE3
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 FQPF7P20
- Infineon Single HEXFET 1 Type N-Channel MOSFET Enhancement, 3-Pin TO-220AB AUIRL3705Z