onsemi QFET Type P-Channel MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-220 FQPF7P20

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Sous-total (1 tube de 50 unités)*

46,60 €

(TVA exclue)

56,40 €

(TVA incluse)

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  • Plus 400 unité(s) expédiée(s) à partir du 19 janvier 2026
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Unité
Prix par unité
le tube*
50 +0,932 €46,60 €

*Prix donné à titre indicatif

N° de stock RS:
145-4636
Référence fabricant:
FQPF7P20
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

200V

Series

QFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

690mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19nC

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

16.07mm

Length

10.36mm

Width

4.9 mm

Automotive Standard

No

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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