Vishay IRF830A N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF
- N° de stock RS:
- 178-0834
- Référence fabricant:
- IRF830APBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
64,80 €
(TVA exclue)
78,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 600 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,296 € | 64,80 € |
| 100 - 200 | 1,231 € | 61,55 € |
| 250 + | 1,166 € | 58,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-0834
- Référence fabricant:
- IRF830APBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | IRF830A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Power Dissipation Pd | 74W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series IRF830A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Power Dissipation Pd 74W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF830A Series Power MOSFET, 500V Drain Source Voltage, 5A Continuous Drain Current - IRF830APBF
This power MOSFET is a high-voltage N-channel enhancement transistor designed for switching and power-conversion tasks in industrial and commercial electronics. It operates across a wide temperature range for demanding environments and is supplied in a through-hole TO-220AB package for straightforward mounting and thermal management.
Features and Benefits:
• 500V drain rating enables high-voltage switching applications
• 1.4Ω maximum Rds reduces conduction losses under load
• 5A continuous drain current supports moderate current designs
• 74W maximum power dissipation allows substantial heat handling
• 24nC typical gate charge yields predictable switching performance
• 30V gate tolerance permits robust gate-drive margins
• 1.4Ω maximum Rds reduces conduction losses under load
• 5A continuous drain current supports moderate current designs
• 74W maximum power dissipation allows substantial heat handling
• 24nC typical gate charge yields predictable switching performance
• 30V gate tolerance permits robust gate-drive margins
Applications
• Suitable for high-voltage supply switching in inverters
• Ideal for industrial motor-drive switching stages
• Used with discrete power supplies in laboratory equipment
• Can be used for resistive and inductive load switching
• Appropriate for through-hole prototyping and repair projects
• Ideal for industrial motor-drive switching stages
• Used with discrete power supplies in laboratory equipment
• Can be used for resistive and inductive load switching
• Appropriate for through-hole prototyping and repair projects
What thermal performance considerations should be made when using it?
Thermal management must account for the 74W dissipation rating
a suitable heatsink and correct mounting in the TO-220AB orientation will maintain junction temperatures within safe limits.
How does the gate drive affect switching behaviour?
With a typical gate charge of 24nC and a maximum Vgs of 30V, gate-drive circuitry should be sized to provide sufficient current for desired rise and fall times while keeping gate voltage below the specified limit.
What environmental limits define its operating range?
The device is rated to function from -55°C up to 150°C, so system design should ensure ambient and thermal-resistance values keep junction temperature inside that span.
Is it suitable for automotive-grade designs?
It is not classified as automotive grade
designers should consider automotive-specific alternatives when vehicle-level qualifications are required.
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