onsemi Dual NVMFD5C650NL 2 N-Channel MOSFET, 111 A, 60 V Enhancement, 8-Pin DFN NVMFD5C650NLWFT1G
- N° de stock RS:
- 172-3345
- Référence fabricant:
- NVMFD5C650NLWFT1G
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 172-3345
- Référence fabricant:
- NVMFD5C650NLWFT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 111A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFD5C650NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Width | 5.1mm | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 111A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFD5C650NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Width 5.1mm | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
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