onsemi Dual 2 Type N-Channel Power MOSFET, 42 A, 60 V Enhancement, 8-Pin DFN
- N° de stock RS:
- 178-4314
- Référence fabricant:
- NTMFD5C674NLT1G
- Fabricant:
- onsemi
Sous-total (1 bobine de 1500 unités)*
319,50 €
(TVA exclue)
387,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 500 unité(s) expédiée(s) à partir du 08 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 0,213 € | 319,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4314
- Référence fabricant:
- NTMFD5C674NLT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 175°C | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Power Dissipation Pd | 37W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 175°C | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Power Dissipation Pd 37W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Industrial Power MOSFET in a 5x6 mm flat lead package designed for compact and efficient designs and including high thermal performance.
Low on resistance
High current capability
Small footprint (5x6 mm)
Benefits
Minimal conduction losses
Robust load performance
Compact Design
Applications
Motor Control
Synchronous DC to DC Regulator
Power Switches (High Side Driver,Low Side Driver, H-Bridges etc.)
Battery Management and Protection
End Products
Battery Packs
Power Supplies
Rotary Drones
Power Tools
Power Over Ethernet (PoE)
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