ROHM RD3P130SP Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 RD3P130SPTL1
- N° de stock RS:
- 172-0398
- Référence fabricant:
- RD3P130SPTL1
- Fabricant:
- ROHM
Sous-total (1 bobine de 2500 unités)*
1 260,00 €
(TVA exclue)
1 525,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 5 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,504 € | 1 260,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 172-0398
- Référence fabricant:
- RD3P130SPTL1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3P130SP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.4 mm | |
| Length | 6.8mm | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3P130SP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 6.4 mm | ||
Length 6.8mm | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Height 2.3mm | ||
Automotive Standard No | ||
RD3P130SP is a Power MOSFET with Low on - resistance, suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
Liens connexes
- ROHM RD3P130SP P-Channel MOSFET 100 V, 3-Pin DPAK RD3P130SPTL1
- ROHM RD3 P-Channel MOSFET 100 V, 3-Pin DPAK RD3P130SPFRATL
- ROHM N-Channel MOSFET 600 V, 3-Pin DPAK R6013VND3TL1
- Infineon HEXFET P-Channel MOSFET 150 V DPAK IRFR6215TRLPBF
- ROHM RD3P08BBLHRB P-Channel MOSFET 100 V, 3-Pin DPAK RD3P08BBLHRBTL
- Infineon HEXFET P-Channel MOSFET 100 V, 3-Pin DPAK IRFR5410TRPBF
- Infineon HEXFET P-Channel MOSFET 100 V, 3-Pin DPAK IRFR5410TRLPBF
- ROHM P-Channel MOSFET 45 V, 3-Pin DPAK RD3H160SPTL1
