Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF IPT015N10N5ATMA1

N° de stock RS:: 171-1991
Référence fabricant:: IPT015N10N5ATMA1
Fabricant:: Infineon

Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF IPT015N10N5ATMA1

Sous-total (1 paquet de 5 unités)*

30,06 €

(TVA exclue)

36,375 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Plus 155 unité(s) expédiée(s) à partir du 31 août 2026

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Unité	Prix par unité	le paquet*
5 +	6,012 €	30,06 €

*Prix donné à titre indicatif

N° de stock RS:: 171-1991
Référence fabricant:: IPT015N10N5ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	100V
	Package Type	HSOF
	Series	IPT015N10N5
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	169nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	10.58mm
	Height	2.4mm
	Length	10.1mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 100V
	Package Type HSOF
	Series IPT015N10N5
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 169nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 10.58mm
	Height 2.4mm
	Length 10.1mm
	Automotive Standard No

Infineon IPT015N10N5 Series MOSFET, 100V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IPT015N10N5ATMA1

This MOSFET is a high-current N-channel switching device designed for power conversion and motor control in demanding electronic systems. It operates over a broad temperature span and is intended for surface-mounted assemblies where robust conduction and rapid switching are required. The component suits designers seeking a compact, high-power transistor for applications requiring significant drain currents and elevated voltage handling.

Features and Benefits:

• 100V drain voltage enables higher-voltage switching applications
• 300A continuous drain current supports heavy-current loads
• 2 mΩ Rds(on) minimises conduction losses under load
• 169 nC typical gate charge reduces switching energy trade-offs
• 375W maximum power dissipation allows high-power operation
• 20V gate tolerance permits flexible gate-drive voltages

Applications

• Suitable for high-current motor drive stages
• Ideal for synchronous rectification in power supplies
• Used with inverter modules for industrial drives
• Can be used for DC-DC converters in power systems
• Appropriate for traction or propulsion power electronics

What thermal range can I expect for harsh environments?

It is specified to function from -55 °C up to 175 °C, accommodating elevated junction conditions.

Which mounting method is required for PCB integration?

The device is intended for surface mounting in an HSOF package footprint for automated assembly.

How many pins are available for connection and layout planning?

The package provides nine pins, allowing for robust current paths and gate/drain/source arrangements.

What channel mode and type does it use for switching topology?

The device is an N-channel MOSFET operating in enhancement mode suitable for low-side or high-side arrangements with appropriate gate driving.