Infineon BSC040N08NS5 N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC040N08NS5ATMA1
- N° de stock RS:
- 171-1969
- Référence fabricant:
- BSC040N08NS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
17,04 €
(TVA exclue)
20,62 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 3 320 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,704 € | 17,04 € |
| 50 - 90 | 1,62 € | 16,20 € |
| 100 - 240 | 1,458 € | 14,58 € |
| 250 - 490 | 1,31 € | 13,10 € |
| 500 + | 1,246 € | 12,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 171-1969
- Référence fabricant:
- BSC040N08NS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TDSON | |
| Series | BSC040N08NS5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.88V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TDSON | ||
Series BSC040N08NS5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.88V | ||
Maximum Operating Temperature 150°C | ||
Width 6.35mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5.49mm | ||
Automotive Standard No | ||
Infineon BSC040N08NS5 Series MOSFET, 80V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC040N08NS5ATMA1
This MOSFET is a silicon N-channel enhancement device designed for high-current switching in surface-mount power applications. It operates across a wide industrial temperature range and is suitable for systems requiring robust conduction and fast switching. The device offers a high continuous current capability and is configured for use where compact, low-loss power handling is required.
Features and Benefits:
• 80V drain voltage enabling high-voltage switching capability
• 100A continuous drain current supporting heavy current loads
• 5.7mΩ low Rds(on) reducing conduction losses
• 104W power dissipation for elevated thermal loading
• 43nC typical gate charge enabling efficient switching transitions
• Vgs 20V maximum gate rating permitting wide gate-drive margins
• 100A continuous drain current supporting heavy current loads
• 5.7mΩ low Rds(on) reducing conduction losses
• 104W power dissipation for elevated thermal loading
• 43nC typical gate charge enabling efficient switching transitions
• Vgs 20V maximum gate rating permitting wide gate-drive margins
Applications
• Suitable for DC-DC converters in power management systems
• Ideal for motor-drive stages in industrial controllers
• Used for synchronous rectification in power supplies
• Can be used for high-current load switching in telecoms racks
• Suitable for power-stage implementations in inverter modules
• Ideal for motor-drive stages in industrial controllers
• Used for synchronous rectification in power supplies
• Can be used for high-current load switching in telecoms racks
• Suitable for power-stage implementations in inverter modules
What package type does it use and why is that relevant?
It is supplied in a compact TDSON surface-mount package that facilitates low-inductance layouts and efficient board-level heat transfer.
What are the environmental operating limits for this device?
It is specified to function from -55°C up to 150°C, allowing use in a broad range of industrial temperature conditions.
How many connections does the package provide for PCB routing?
The device is presented with eight pins to support power and gate/thermal connections for robust PCB integration.
What is the channel conduction type and mode for circuit design?
It uses an N-channel enhancement-mode configuration, suitable for low-side and synchronous switching topologies.
Liens connexes
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