Infineon BSC070N10NS5 N-Channel MOSFET, 80 A, 80 V Enhancement, 8-Pin TDSON

N° de stock RS:: 170-2298
Référence fabricant:: BSC070N10NS5ATMA1
Fabricant:: Infineon

Infineon BSC070N10NS5 N-Channel MOSFET, 80 A, 80 V Enhancement, 8-Pin TDSON

Sous-total (1 bobine de 5000 unités)*

2 890,00 €

(TVA exclue)

3 495,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 10 septembre 2027

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Unité	Prix par unité	la bobine*
5000 +	0,578 €	2 890,00 €

*Prix donné à titre indicatif

N° de stock RS:: 170-2298
Référence fabricant:: BSC070N10NS5ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	80V
	Series	BSC070N10NS5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	10.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	83W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	30nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.1mm
	Length	5.49mm
	Width	6.35mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 80V
	Series BSC070N10NS5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 10.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 83W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 30nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.1mm
	Length 5.49mm
	Width 6.35mm
	Automotive Standard No

Infineon BSC070N10NS5 Series MOSFET, 80A Maximum Continuous Drain Current, 80V Maximum Drain Source Voltage - BSC070N10NS5ATMA1

This MOSFET is a high-current, N-channel enhancement device designed for surface-mount power stages. It is intended for switching and power-conversion contexts where compact mounting and robust conduction are required. The component operates across a wide temperature range and is built for applications demanding substantial current-handling and gate-drive tolerance.

Features and Benefits:

• Very low Rds(on) 10.2 mΩ for reduced conduction losses
• High continuous drain current 80A enabling heavy load operation
• Maximum Vds 80V for mid-voltage power systems
• Typical gate charge 30 nC for efficient switching control
• Peak power dissipation 83W to handle thermal stress
• Gate-source limit 20V to protect drive circuitry

Applications

• Suitable for synchronous buck converter stages
• Ideal for motor-drive half-bridge assemblies
• Used with high-current DC-DC converters
• Can be used for server power distribution modules
• Appropriate for telecom rectification and switchgear

What thermal extremes can the device tolerate in operation?

It is specified to function reliably from -55 °C up to 150 °C, allowing use in demanding thermal environments.

How many pins and what mounting style does it use?

The package contains eight pins and is delivered in a TDSON surface-mount format for compact PCB placement.

What channel type and mode are implemented for switching?

The transistor uses an N-type channel in enhancement mode, requiring a positive gate drive to conduct.

Which physical dimensions affect board layout and placement?

The body measures 5.49mm in length, 6.35mm in width and 1.1mm in height, informing footprint and clearance design.