Infineon IPB64N25S3-20 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263 IPB64N25S320ATMA1
- N° de stock RS:
- 171-1959
- Référence fabricant:
- IPB64N25S320ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
34,92 €
(TVA exclue)
42,255 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 25 unité(s) expédiée(s) à partir du 10 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 5 | 6,984 € | 34,92 € |
| 10 - 20 | 5,936 € | 29,68 € |
| 25 - 45 | 5,588 € | 27,94 € |
| 50 - 120 | 5,17 € | 25,85 € |
| 125 + | 4,82 € | 24,10 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 171-1959
- Référence fabricant:
- IPB64N25S320ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | IPB64N25S3-20 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Automotive Standard | AEC | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series IPB64N25S3-20 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Length 10mm | ||
Automotive Standard AEC | ||
Infineon IPB64N25S3-20 Series MOSFET, 250V Maximum Drain Source Voltage, 64A Maximum Continuous Drain Current - IPB64N25S320ATMA1
This MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in demanding electronic systems. It operates across a very wide temperature span and is built for surface-mount deployment in a TO-263 package, making it suitable for compact assemblies where robust power handling is required.
Features and Benefits:
• 250V drain rating enables high-voltage switching capability
• 64A continuous drain current supports heavy current loads
• 20mΩ Rds(on) minimises conduction losses during operation
• 300W power dissipation allows sustained thermal loading
• 67nC typical gate charge ensures predictable switching behaviour
• 20V gate voltage rating maintains safe gate-drive margins
• 64A continuous drain current supports heavy current loads
• 20mΩ Rds(on) minimises conduction losses during operation
• 300W power dissipation allows sustained thermal loading
• 67nC typical gate charge ensures predictable switching behaviour
• 20V gate voltage rating maintains safe gate-drive margins
Applications
• Ideal for automotive power-conversion modules
• Suitable for high-current DC-DC converters
• Used with motor-drive inverter stages
• Can be used for server and telecoms power supplies
• Suitable for high-temperature industrial electronics
• Suitable for high-current DC-DC converters
• Used with motor-drive inverter stages
• Can be used for server and telecoms power supplies
• Suitable for high-temperature industrial electronics
What thermal range can this device tolerate in harsh environments?
It functions across -55°C to 175°C ambient endpoints, allowing use in extreme-temperature applications and reducing the need for extensive thermal protection.
How does the package influence PCB assembly and cooling?
The TO-263 surface-mount form factor provides a low-profile mounting option and presents a large thermal pad for heat transfer to heatsinks or copper pours on the PCB.
What gate-drive considerations are required for reliable switching?
A gate-source rating of 20V sets the maximum permissible gate drive
designers should select gate voltages within this limit and account for the 67nC gate charge when sizing drivers.
How does the device type affect circuit topology choices?
As an enhancement-mode N-channel MOSFET, it needs a positive gate drive relative to the source for conduction, making it appropriate for low-side switching and synchronous rectification arrangements.
Liens connexes
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