Infineon IPB64N25S3-20 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263

N° de stock RS:: 170-2295
Référence fabricant:: IPB64N25S320ATMA1
Fabricant:: Infineon

Infineon IPB64N25S3-20 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263

Sous-total (1 bobine de 1000 unités)*

3 108,00 €

(TVA exclue)

3 761,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 19 octobre 2026

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Unité	Prix par unité	la bobine*
1000 +	3,108 €	3 108,00 €

*Prix donné à titre indicatif

N° de stock RS:: 170-2295
Référence fabricant:: IPB64N25S320ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-263
	Series	IPB64N25S3-20
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	67nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	300W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	4.4mm
	Length	10mm
	Automotive Standard	AEC

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-263
	Series IPB64N25S3-20
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 67nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 300W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 4.4mm
	Length 10mm
	Automotive Standard AEC

Infineon IPB64N25S3-20 Series MOSFET, 250V Maximum Drain Source Voltage, 64A Maximum Continuous Drain Current - IPB64N25S320ATMA1

This MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in demanding electronic systems. It operates across a very wide temperature span and is built for surface-mount deployment in a TO-263 package, making it suitable for compact assemblies where robust power handling is required.

Features and Benefits:

• 250V drain rating enables high-voltage switching capability
• 64A continuous drain current supports heavy current loads
• 20mΩ Rds(on) minimises conduction losses during operation
• 300W power dissipation allows sustained thermal loading
• 67nC typical gate charge ensures predictable switching behaviour
• 20V gate voltage rating maintains safe gate-drive margins

Applications

• Ideal for automotive power-conversion modules
• Suitable for high-current DC-DC converters
• Used with motor-drive inverter stages
• Can be used for server and telecoms power supplies
• Suitable for high-temperature industrial electronics

What thermal range can this device tolerate in harsh environments?

It functions across -55°C to 175°C ambient endpoints, allowing use in extreme-temperature applications and reducing the need for extensive thermal protection.

How does the package influence PCB assembly and cooling?

The TO-263 surface-mount form factor provides a low-profile mounting option and presents a large thermal pad for heat transfer to heatsinks or copper pours on the PCB.

What gate-drive considerations are required for reliable switching?

A gate-source rating of 20V sets the maximum permissible gate drive

designers should select gate voltages within this limit and account for the 67nC gate charge when sizing drivers.

How does the device type affect circuit topology choices?

As an enhancement-mode N-channel MOSFET, it needs a positive gate drive relative to the source for conduction, making it appropriate for low-side switching and synchronous rectification arrangements.