Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 165-5484
- Référence fabricant:
- IRFS7437TRLPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 800 unités)*
567,20 €
(TVA exclue)
686,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 600 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 - 800 | 0,709 € | 567,20 € |
| 1600 + | 0,691 € | 552,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5484
- Référence fabricant:
- IRFS7437TRLPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 230W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 230W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Statut RoHS non applicable
- Pays d'origine :
- MX
Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF
This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its Ability to manage high current and voltage levels makes it well-suited for Advanced technology applications.
Features & Benefits
• Supports a maximum continuous drain current of 250A for high-power applications
• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups
• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses
• Designed for surface mounting, simplifying installation
• Capable of handling Rapid switching applications, which enhances efficiency
Applications
• Suitable for brushed motor drive
• Ideal for battery-powered circuits, enabling efficient power usage
• Employed in half-bridge and full-bridge topologies for precise control
• Utilised in synchronous rectifier to enhance energy savings
• Applicable in resonant mode power supplies for stable performance
How is the power dissipation managed during operation?
Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.
What is the significance of the low Rds(on) value?
The low Rds(on) Value minimises energy loss during operation, improving efficiency in high-current applications.
Can this be used in high-temperature environments?
With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.
What installation considerations should I be aware of?
Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.
Is it compatible with various power supply designs?
Yes, the MOSFET is versatile and can be integrated into numerous power supply designs, providing adaptability across different projects.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 IRFS7437TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 6-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263