Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 165-5608
- Référence fabricant:
- IPB17N25S3100ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
965,00 €
(TVA exclue)
1 168,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 24 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 0,965 € | 965,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5608
- Référence fabricant:
- IPB17N25S3100ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | OptiMOS-T | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Height | 4.4mm | |
| Width | 9.25 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series OptiMOS-T | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10mm | ||
Height 4.4mm | ||
Width 9.25 mm | ||
Automotive Standard AEC-Q101 | ||
Statut RoHS non applicable
- Pays d'origine :
- CN
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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