Infineon IPB180N10S4-02 N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK IPB180N10S402ATMA1

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Informations sur le stock actuellement non accessibles
N° de stock RS:
170-2286
Référence fabricant:
IPB180N10S402ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

TO-263

Series

IPB180N10S4-02

Mounting Type

Surface Mount

Pin Count

7 + Tab

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

10.25mm

Length

10mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

156 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

The Infineon IPB180N10S4-02 is the 100V, N-channel automotive MOSFET. The package type of the device is the D2PAK 7pin and 175°C operating temperature.

N-channel enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow

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