Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220 SPA20N60C3XKSA1
- N° de stock RS:
- 170-2267
- Référence fabricant:
- SPA20N60C3XKSA1
- Fabricant:
- Infineon
Sous-total (1 tube de 50 unités)*
83,45 €
(TVA exclue)
100,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 10 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 1,669 € | 83,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 170-2267
- Référence fabricant:
- SPA20N60C3XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | SPA20N60C3 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Power Dissipation Pd | 34.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.15mm | |
| Length | 10.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series SPA20N60C3 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Power Dissipation Pd 34.5W | ||
Maximum Operating Temperature 150°C | ||
Height 16.15mm | ||
Length 10.65mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Statut RoHS : Exempté
Infineon MOSFET
The Infineon TO-220FP-3 through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 34.5W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Ease of use
• Field proven CoolMOM quality
• High efficiency and power density
• High peak current capability
• High reliability
• Improved transconductance
• Lead (Pb) free
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost/performance
• Periodic avalanche rated
• Ultra low gate charge
• Very low energy storage in output capacitance (Eoss) 400V
Applications
• Adapter
• PC power
• Server power supplies
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC
Liens connexes
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