Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060C7XKSA1
- N° de stock RS:
- 222-4926
- Référence fabricant:
- IPP60R060C7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
17,54 €
(TVA exclue)
21,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 946 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 8,77 € | 17,54 € |
| 10 - 18 | 8,065 € | 16,13 € |
| 20 - 48 | 7,55 € | 15,10 € |
| 50 - 98 | 7,015 € | 14,03 € |
| 100 + | 6,49 € | 12,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4926
- Référence fabricant:
- IPP60R060C7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPP60R | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 162W | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.45mm | |
| Width | 4.57mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPP60R | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 162W | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 9.45mm | ||
Width 4.57mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Liens connexes
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