Infineon CoolMOS C3 Type N-Channel MOSFET, 20.7 A, 650 V Enhancement, 3-Pin TO-247 SPW20N60C3FKSA1
- N° de stock RS:
- 462-3449
- Référence fabricant:
- SPW20N60C3FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
5,04 €
(TVA exclue)
6,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 162 unité(s) expédiée(s) à partir du 31 août 2026
- Plus 219 unité(s) expédiée(s) à partir du 04 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,04 € |
| 10 - 24 | 4,78 € |
| 25 - 49 | 4,57 € |
| 50 - 99 | 4,38 € |
| 100 + | 4,07 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 462-3449
- Référence fabricant:
- SPW20N60C3FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20.7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS C3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Height | 20.95mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20.7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS C3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.3mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Height 20.95mm | ||
Automotive Standard AEC-Q101 | ||
Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1
This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.
Features & Benefits
• N-channel configuration enhances conduction capabilities
• Maximum continuous drain current of 21A supports intensive applications
• High voltage rating of 650V provides reliability in challenging conditions
• Low gate charge facilitates efficient switching, reducing energy losses
• Excellent thermal performance allows operation at elevated temperatures
• Designed for through-hole mounting, simplifying assembly procedures
Applications
• Power supply regulation and management in industrial systems
• Motor control systems for efficient power delivery
• Utilised in DC-DC converters for high voltage
• Integrated into renewable energy systems for effective energy conversion
• Employed in power electronics for improved device performance
What is the maximum operating temperature for this component?
It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.
How does the low gate charge benefit device operation?
A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.
Can this MOSFET handle repeated high-temperature cycling?
Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.
Is there a specific mounting style recommended for this device?
This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.
What safety precautions should be taken during installation?
Ensure the gate-source voltage does not exceed specified limits (-20V to +20V) to prevent device damage, and follow standard ESD precautions to avoid static damage.
Liens connexes
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 SPW35N60C3FKSA1
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 SPW47N60C3FKSA1
- Infineon CoolMOS^TM MOSFET 650 V, 3-Pin TO-220
- Infineon CoolMOS^TM MOSFET 650 V, 3-Pin TO-220 SPP20N60C3XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247