Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC

N° de stock RS:: 168-8757
Référence fabricant:: IRF7103TRPBF
Fabricant:: Infineon

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC

Sous-total (1 bobine de 4000 unités)*

820,00 €

(TVA exclue)

992,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	la bobine*
4000 +	0,205 €	820,00 €

*Prix donné à titre indicatif

N° de stock RS:: 168-8757
Référence fabricant:: IRF7103TRPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	50V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Length	5mm
	Standards/Approvals	No
	Height	1.5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 50V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Length 5mm
	Standards/Approvals No
	Height 1.5mm
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF

This MOSFET is designed for efficient performance across various applications. Its Durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.

Features & Benefits

• Low Rds(on) of 200mΩ for improved efficiency

• Maximum continuous drain current of 3A enhances power handling

• Operational temperatures up to +150°C for increased reliability

• Wide gate threshold range of 1V to 3V for flexible control

• Dual isolated transistor configuration aids circuit integration

• Surface mount design simplifies PCB assembly and optimises space

Applications

• Used in power supply designs for energy-efficient operation

• Integrated into motor drive for efficient motor control

• Employed in switching power supplies for improved performance

• Suitable for automation systems needing dependable switching components

What is the recommended operating temperature range for this component?

The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does one determine the suitable gate voltage for optimal performance?

The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.

What safety precautions should be taken when using this device?

It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.

Can it be used in circuits requiring fast switching?

Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.

Is this MOSFET compatible with standard PCB layouts?

The surface mount design complies with standard PCB layouts, facilitating integration into existing circuits with minimal adjustments for placement.