Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC IRF7303TRPBF
- N° de stock RS:
- 826-8841
- Référence fabricant:
- IRF7303TRPBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 20 unités)*
9,20 €
(TVA exclue)
11,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 60 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 240 unité(s) expédiée(s) à partir du 12 juin 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,46 € | 9,20 € |
| 100 - 180 | 0,369 € | 7,38 € |
| 200 - 480 | 0,341 € | 6,82 € |
| 500 - 980 | 0,318 € | 6,36 € |
| 1000 + | 0,295 € | 5,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 826-8841
- Référence fabricant:
- IRF7303TRPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.7nC | |
| Forward Voltage Vf | 1V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.7nC | ||
Forward Voltage Vf 1V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF
Features & Benefits
Applications
What is the maximum gate-source voltage for this device?
How does the Rds(on) Value affect efficiency?
Can it operate at extreme temperatures?
What type of circuit boards is this compatible with?
How should one approach the installation of this component?
Liens connexes
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