Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC

N° de stock RS:: 165-5931
Référence fabricant:: IRF7303TRPBF
Fabricant:: Infineon

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC

Sous-total (1 bobine de 4000 unités)*

888,00 €

(TVA exclue)

1 076,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 11 décembre 2026

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Unité	Prix par unité	la bobine*
4000 +	0,222 €	888,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-5931
Référence fabricant:: IRF7303TRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.9A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	16.7nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Length	5mm
	Standards/Approvals	No
	Height	1.5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.9A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 16.7nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Length 5mm
	Standards/Approvals No
	Height 1.5mm
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF

This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for Compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.

Features & Benefits

• Enhanced efficiency with a low Rds(on) of 80 mΩ

• High power dissipation capability with a maximum of 2W

• Dual-channel integration for increased functionality in designs

• Robust thermal operation up to +150°C for versatile applications

• Optimised for enhancement mode operation to improve energy management

• Compact SOIC package facilitates easy integration into modern PCBs

Applications

• Used in power supply circuits for voltage regulation

• Employed in motor control systems for efficient operation

• Suitable for lighting requiring robust switching

• Integrated into consumer electronics for improved power efficiency

• Ideal for automotive systems that require dependable performance

What is the maximum gate-source voltage for this device?

The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.

How does the Rds(on) Value affect efficiency?

A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.

Can it operate at extreme temperatures?

Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.

What type of circuit boards is this compatible with?

It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.

How should one approach the installation of this component?

Care should be taken to use appropriate soldering techniques to avoid heat damage and ensure a secure fit on the PCB.